Title :
High performance low current CDMA receiver front end using 0.18 μm SiGe BiCMOS
Author :
Kamat, Manish ; Ye, Peihua ; He, Yong ; Agarwal, Basant ; Good, Pete ; Lloyd, Steve ; Loke, Aravind
Author_Institution :
Skyworks Solutions Inc., Irvine, CA, USA
Abstract :
Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining popularity for RF circuits in wireless applications due to high performance, low cost, high yield and levels of integration with mixed signal and digital CMOS circuits. A tri-band quad mode CDMA RF receiver front end is designed in a 0.18 μm SiGe BiCMOS process that enabled LNAs with sub 1 dB noise figure and low-noise high-linearity mixers with low current consumption.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; UHF mixers; code division multiple access; integrated circuit design; integrated circuit measurement; integrated circuit noise; radio receivers; semiconductor materials; 0.18 micron; 1 dB; 1700 MHz; 1900 MHz; 800 MHz; LNA noise figure; RFIC; SiGe; SiGe BiCMOS; high-performance low-current CDMA receiver front ends; low current consumption mixers; low noise amplifiers; low-noise high-linearity mixers; silicon germanium bipolar CMOS process technology; tri-band quad-mode CDMA RF receivers; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Costs; Germanium silicon alloys; Multiaccess communication; RF signals; Radio frequency; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213885
