Investigation of Ti, Co and Fe silicides on SIMOX materials

Author

Lin, Chenglu ; Wang, Lianwai ; Zhu, Shiyang ; Liu, Ping ; Hemment, P.L.F. ; Zou, Shichang

Author_Institution

Inst. of Metall., Acad. Sinica, Shanghai, China

fYear

1995

Firstpage

248

Lastpage

252

Abstract

The fabrication of Ti, Co and Fe silicides on SIMOX materials has been investigated. These multilayer structures have been synthesized by different methods respectively. The physical properties and microstructure have been investigated. The experimental results show that TiSi₂ with a low sheet resistance of 4.5Ω/□, can be formed on the thin film SIMOX. An epitaxial CoSi₂ film has been obtained on SIMOX by a solid phase reaction of Co/Ti with Si overlayer of SIMOX. Semiconducting β-FeSi ₂ film has been synthesized on SIMOX by solid phase epitaxy

Keywords

SIMOX; cobalt compounds; iron compounds; solid phase epitaxial growth; titanium compounds; CoSi₂; FeSi₂; Si-SiO₂; TiSi₂; epitaxial CoSi₂ film; fabrication; microstructure; multilayer structures; semiconducting β-FeSi₂ film; sheet resistance; silicides; solid phase epitaxy; solid phase reaction; thin film SIMOX; Fabrication; Iron; Microstructure; Nonhomogeneous media; Semiconductivity; Semiconductor films; Semiconductor thin films; Sheet materials; Silicides; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500077

Filename

500077