A SiGe WCDMA/DCS dual-band RF front-end receiver

Author

Hsu, June-Ming ; Chen, Yung-Hui ; Chen, Shin-Fu ; Kuo, Ming-Ching ; Su, Peng-Un

Author_Institution

SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2003

Firstpage

27

Lastpage

30

Abstract

A WCDMA/DCS dual-band RF front-end receiver IC fabricated in a 0.35 μm SiGe BiCMOS technology is presented. This RF receiver uses a novel fully-differential LNA with dual input-stages to replace the requirement of paralleling two similar LNAs in previous dual-band designs. This chip dissipates 24 mA from a 2.7 V supply and can be used in direct-conversion or low-IF receivers. The measured voltage gain, P1dB and iIP3 are 32 dB, -25 dBm and -15 dBm, respectively.

Keywords

3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; cellular radio; code division multiple access; integrated circuit design; integrated circuit measurement; radio receivers; semiconductor materials; 0.35 mm; 2.7 V; 24 mA; 32 dB; 3G cellular phone service; P1dB; SiGe; SiGe BiCMOS technology; SiGe WCDMA/DCS dual-band RF front-end receivers; UHF receivers; chip power consumption/voltage supply; direct-conversion receivers; dual input-stage fully-differential LNA; iIP3; low-IF receivers; second-generation cellular phone systems; voltage gain; BiCMOS integrated circuits; Distributed control; Dual band; Gain measurement; Germanium silicon alloys; Multiaccess communication; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213886

Filename

1213886