Title :
Low-voltage and high-speed CMOS/SIMOX technology
Author :
Xing Zhang ; Wei, Liqiong ; Xi, Xuemei ; Wang, Yangyuan ; Chu, Paul K.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Low-voltage high performance 0.5 μm CMOS TFSOI/SIMOX devices and ring oscillators with 1.5 V and 3.0 V supply voltage have been developed. Both N- and P-MOSFETs have well-behaved characteristics. The propagation delays per stage of a 19-stage CMOS/SIMOX ring oscillator are 840 ps and 390 ps with 1.5 V and 3 V supply voltage, respectively. The speed of a TF CMOS/SIMOX ring oscillator is much faster than that of CMOS devices fabricated in bulk silicon
Keywords :
CMOS analogue integrated circuits; SIMOX; integrated circuit technology; 0.5 micron; 1.5 V; 3.0 V; 390 ps; 840 ps; N-MOSFETs; P-MOSFETs; TFSOI devices; low-voltage high-speed CMOS/SIMOX technology; propagation delay; ring oscillators; CMOS technology; Integrated circuit interconnections; MOSFETs; Parasitic capacitance; Ring oscillators; Semiconductor films; Silicon; Temperature; Threshold voltage; Voltage-controlled oscillators;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500079
