A direct conversion RF front-end for 2-GHz WCDMA and 5.8-GHz WLAN applications

Author

Hotti, Mikko ; Kaukovuori, Jouni ; Ryynänen, Jussi ; Kivekäs, Kalle ; Jussila, Jarkko ; Halonen, Kari

Author_Institution

Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland

fYear

2003

Firstpage

45

Lastpage

48

Abstract

A direct conversion RF front-end for 2.0 GHz WCDMA and 5.8 GHz WLAN applications is described. The measured double-sideband NF, IIP3 and voltage gain are 3.6 dB, -15.1 dBm and 29.5 dB for WCDMA, and 5.2 dB, -17.4 dBm and 26.5 dB for WLAN, respectively. The RF front-end consumes 22.3 mA in WCDMA mode and 23.1 mA in WLAN mode from a 2.7 V supply. The chip is fabricated using a 0.35 μm 45 GHz SiGe BiCMOS process.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; integrated circuit design; microwave receivers; radio receivers; semiconductor materials; wireless LAN; 0.35 micron; 2.0 GHz; 2.7 V; 22.3 mA; 23.1 mA; 26.5 dB; 29.5 dB; 3.6 dB; 45 GHz; 5.2 dB; 5.8 GHz; SiGe; SiGe BICMOS process fabrication; WCDMA; WLAN; direct conversion RF front-end power consumption; front-end double-sideband noise figure/IIP3/voltage gain; multi-band operation RF front-ends/receivers; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Multiaccess communication; Noise measurement; Radio frequency; Semiconductor device measurement; Silicon germanium; Voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213890

Filename

1213890