Title :
Annealing Treatment Influence on Photoluminescence of the n-GaN Blue LED after a Dry Etching Process
Author :
Shen-Li Chen ; Chin Chai Chen
Author_Institution :
Dept. of of Electron. Eng., Nat. United Univ., Miaoli, Taiwan
Abstract :
The annealing treatment was investigated in this paper in order to recover the surface damage caused by ion bombardment in a plasma etching process. At the beginning, the n-GaN samples were being heated and annealed in an N2 ambient which would result in influencing the electric and photonic characteristics. Eventually, it shows that the resistance has been improved after an annealing treatment especially at 550 ? situation. Meanwhile, photoluminescence (PL) measurements illustrate the same results of these n-GaN samples, which is increased > 200% than that of a non-annealing treatment group. However, the annealing treatment can´t completely repair the luminescence intensity due to the point defects from the DUT surface.
Keywords :
III-V semiconductors; annealing; electric resistance; gallium compounds; light emitting diodes; photoluminescence; plasma materials processing; point defects; sputter etching; wide band gap semiconductors; GaN; annealing treatment; dry etching process; electric characteristics; ion bombardment; luminescence intensity; n-GaN blue LED; photoluminescence measurements; photonic characteristics; plasma etching process; point defects; resistance; surface damage; Annealing; Dry etching; Gallium nitride; Luminescence; Physics; Plasmas; Annealing; Inductively coupled plasma (ICP); Metal-organic-chemical-vapor deposition (MOCVD); Photoluminescence (PL);
Conference_Titel :
Computer, Consumer and Control (IS3C), 2014 International Symposium on
Conference_Location :
Taichung
DOI :
10.1109/IS3C.2014.63
