DocumentCode
1672556
Title
A GIDL-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2
Author
Inagaki, Ryosuke ; Miura-Mattausch, Mitiko ; Inoue, Yasuaki
Author_Institution
Waseda Univ., Fukuoka
fYear
2007
Firstpage
1057
Lastpage
1061
Abstract
A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs has been proposed and implemented into HiSIM2, first complete surface potential based model. The model consists of one tunneling mechanism considering two tunneling currents, band to band tunneling (BTBT) and trap assisted tunneling (TAT), and requires totally 7 model parameters covering all bias conditions. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning. Validity of the model has been tested with a circuit, which is sensitive to the change of the stored charge due to tunneling current.
Keywords
MOSFET; leakage currents; tunnelling; GIDL-current model; HiSIM2; advanced MOSFET technologies; band to band tunneling; gate induced drain leakage current; surface potential; trap assisted tunneling; tunneling mechanism; Circuit simulation; Circuit testing; Current measurement; DC generators; Electronic mail; MOSFET circuits; Size measurement; Spontaneous emission; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
Conference_Location
Kokura
Print_ISBN
978-1-4244-1473-4
Type
conf
DOI
10.1109/ICCCAS.2007.4348228
Filename
4348228
Link To Document