Title :
0.25 μm low power CMOS devices and circuits from 8 inch SOI materials
Author :
Chen, B.A. ; Yapsir, A.S. ; Wu, S. ; Schulz, R. ; Yee, D.S. ; Sadana, D.K. ; Hovel, H.J. ; Ning, T.H. ; Shahidi, G. ; Davari, B.
Author_Institution :
Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
0.25 μm SOI-CMOS ring oscillators, various circuits and SRAM from 8-inch SIMOX wafers are reported. Both active power and stand-by leakage are compared on fully integrated lots for both SOI and bulk materials. The great advantage of SOI for active power reduction is demonstrated for various circuits. Stand-by leakage paths have been systematically studied on their dependence on material, process integration and devices. Potential solutions to reduce each stand-by leakage current are discussed. From these early 8-inch SIMOX materials, encouraging results suggest that low stand-by power can be achieved by optimizations of SOI material preparation, process integration and device design
Keywords :
CMOS integrated circuits; SIMOX; integrated circuit technology; leakage currents; 0.25 micron; 8 inch; SIMOX; SOI; SRAM; active power; device design; low power CMOS circuits; material preparation; process integration; ring oscillator; stand-by leakage current; CMOS technology; Circuits; Clocks; Delay; Frequency; Inverters; Isolation technology; Leakage current; Power supplies; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500080
