Title :
Ultra-thin-film silicon-on-insulator structure using oxidized porous silicon
Author :
Li, Ahen ; Huang, Yiping ; Zou, Sixun ; Tang, Tingao ; Kwor, Richard
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
Ultra-thin-film Silicon-On-Insulator (TFSOI) structure with 100 nm-thick and 100 μm-wide top Si islands were fabricated using the full isolation by oxidized porous silicon (FIPOS) technique. These structures were characterized using XTEM, ASP, Raman spectroscopy and electrical breakdown measurement. The results indicate that the TFSOI structures are of high quality and the Si islands are fully isolated
Keywords :
Raman spectra; electric breakdown; island structure; isolation technology; oxidation; porous materials; silicon-on-insulator; transmission electron microscopy; ASP; FIPOS; Raman spectroscopy; Si islands; Si-SiO2; TFSOI; XTEM; electrical breakdown; fabrication; full isolation by oxidized porous silicon; ultra-thin-film silicon-on-insulator structure; Doping; Epitaxial growth; Etching; Frequency; Oxidation; Raman scattering; Silicon on insulator technology; Spectroscopy; Stress measurement; Tensile stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500082
