Title :
A first digitally-controlled oscillator in a deep-submicron CMOS process for multi-GHz wireless applications
Author :
Staszewski, Robert B. ; Leipold, Dirk ; Hung, Chih-Ming ; Balsara, Poras T.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
A novel digitally-controlled oscillator (DCO) architecture for multi-GHz RF applications is proposed and demonstrated. It deliberately avoids any use of an analog tuning voltage control line. Fine frequency resolution is achieved through high-speed dithering. This enables use of fully-digital frequency synthesizers in the most advanced deep-submicron digital CMOS processes which allow almost no analog extensions. It promotes cost-effective integration with the digital back-end on to a single silicon die. The demonstrator test chip has been fabricated in a digital 0.13 μm CMOS process together with a DSP. The DCO core consumes 2.3 mA from a 1.5 V supply and has a very large tuning range of 500 MHz. The phase noise is -112 dBc/Hz at 500 kHz offset.
Keywords :
CMOS digital integrated circuits; digital signal processing chips; frequency synthesizers; integrated circuit noise; microwave oscillators; phase noise; radio equipment; variable-frequency oscillators; voltage-controlled oscillators; 0.13 micron; 1.5 V; 2.3 mA; DCO; DSP; RF applications; analog extensions; analog tuning voltage control line; cost-effective integration; digital CMOS processes; digital back-end; digitally-controlled oscillator; frequency resolution; fully-digital frequency synthesizers; high-speed dithering; phase noise; single silicon die; test chip; tuning range; wireless applications; CMOS process; Digital signal processing chips; Frequency synthesizers; Phase noise; Radio frequency; Silicon; Testing; Tuning; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213898