DocumentCode
1672712
Title
Hydrothermal preparation of BaTiO3 thin film on silicon
Author
Xu, W-ping ; Wang, Lianwei ; Xin, Huoping ; Zheng, Lirong ; Lin, Chenglu
Author_Institution
Inst. of Metall., Acad. Sinica, Shanghai, China
fYear
1995
Firstpage
278
Lastpage
280
Abstract
In situ crystallized BaTiO3 thin films have been successfully prepared on Ti-covered silicon substrates at low temperature of 160°C by hydrothermal method. The surface of the samples was dense, homogeneous and highly insulating, the films had good adherence to the substrate while exhibited dark-blue color. X-ray diffraction (XRD) characterization and spreading resistance probes (SRP) measurements showed that a multi-layer structure of cubic BaTiO3 /amorphous BaTiO3-x/Ti/Si was formed, while it became tetragonal BaTiO3/Ti/Si after rapid thermal annealing (RTA) at 600°C for 60 sec. Thus, it can be seen that hydrothermal method for preparing perovskite thin films will become an excellent low-temperature processing with great significance
Keywords
X-ray diffraction; barium compounds; coating techniques; dielectric thin films; electrical resistivity; rapid thermal annealing; 160 C; 600 C; BaTiO3 thin film; BaTiO3-Ti-Si; Ti-covered silicon substrate; X-ray diffraction; adherence; color; hydrothermal preparation; in situ crystallization; low-temperature processing; multilayer structure; perovskite; rapid thermal annealing; spreading resistance; Crystallization; Insulation; Probes; Semiconductor thin films; Silicon; Surface resistance; Temperature; Thermal resistance; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500086
Filename
500086
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