Title :
A ferroelectric thin film capacitor C-V model
Author :
Zheng, Chen ; Tingao Tang
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
The local hysteresis loop is adopted to investigate the theory of the hysteresis loop under an unsaturated electric field for a ferroelectric thin film capacitor with MFM structure. The C-V characteristic under the condition of high frequency and small signal is modeled theoretically
Keywords :
dielectric hysteresis; ferroelectric capacitors; ferroelectric thin films; thin film capacitors; C-V model; MFM structure; ferroelectric thin film capacitor; local hysteresis loop; Capacitance; Capacitance-voltage characteristics; Capacitors; Ferroelectric films; Ferroelectric materials; Frequency; Hysteresis; Nonvolatile memory; Polarization; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500087
