DocumentCode
1672747
Title
A ferroelectric thin film capacitor C-V model
Author
Zheng, Chen ; Tingao Tang
Author_Institution
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
fYear
1995
Firstpage
281
Lastpage
283
Abstract
The local hysteresis loop is adopted to investigate the theory of the hysteresis loop under an unsaturated electric field for a ferroelectric thin film capacitor with MFM structure. The C-V characteristic under the condition of high frequency and small signal is modeled theoretically
Keywords
dielectric hysteresis; ferroelectric capacitors; ferroelectric thin films; thin film capacitors; C-V model; MFM structure; ferroelectric thin film capacitor; local hysteresis loop; Capacitance; Capacitance-voltage characteristics; Capacitors; Ferroelectric films; Ferroelectric materials; Frequency; Hysteresis; Nonvolatile memory; Polarization; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500087
Filename
500087
Link To Document