Effects of precursor concentration on ZnO nanorods grown on flexible PET substrate by hydrothermal synthesis

Author

Shin, C.M. ; Lee, J.Y. ; Heo, J.H. ; Lee, T.M. ; Park, J.H. ; Ryu, H.

Author_Institution

Dept. of Nano Syst. Eng., Inje Univ., Gimhae, South Korea

fYear

2010

Firstpage

935

Lastpage

936

Abstract

In this study, the effects of precursor concentration on the zinc oxide (ZnO) nanorods grown on flexible polyethylen terephthalate (PET) substrate with and without buffer layer were discussed. The concentration was varied from 0.05 to 0.5M. When we inserted buffer layer before hydrothermally growth of ZnO, better aligned ZnO nanorods were grown. At relatively middle concentration (from 0.2 to 0.3M), well-aligned ZnO nanorods were grown on PET substrate with and without buffer layer. The crystal structural properties and surface morphologies were examined by x-ray diffraction (XRD), and field emission scanning electron microscope (FE-SEM), respectively.

Keywords

II-VI semiconductors; X-ray diffraction; buffer layers; crystal structure; field emission electron microscopy; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; surface morphology; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO; buffer layer; crystal structural properties; field emission scanning electron microscope; flexible PET substrate; flexible polyethylene terephthalate substrate; hydrothermal synthesis; nanorods; surface morphologies; Positron emission tomography; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425112

Filename

5425112