Title :
A 114GHz VCO in 0.13 μm CMOS technology
Author :
Huang, Ping-Chen ; Tsai, Ming-Da ; Wang, Huei ; Chen, Chun-Hung ; Chang, Chih-Sheng
Author_Institution :
Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A differential transimpedance amplifier combined with a positive feedback compensation circuit tolerates 1.5pF parasitic capacitance from ESD protection in 0.35 μm SiGe BiCMOS. A 2.5Gb/s receiver demonstrates 15kΩ transimpedance gain and DR from -3 to -23.5dBm while consuming 21mW from a 3V supply.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; capacitance; compensation; differential amplifiers; electrostatic discharge; feedback amplifiers; millimetre wave receivers; voltage-controlled oscillators; 0.13 micron; 0.35 micron; 1.5 pF; 114 GHz; 2.5 Gbit/s; 21 mW; 3 V; CMOS technology; ESD protection; Ge-Si; SiGe BiCMOS; VCO; differential transimpedance amplifier; parasitic capacitance; positive feedback compensation circuit; receiver; transimpedance gain; BiCMOS integrated circuits; CMOS technology; Differential amplifiers; Electrostatic discharge; Feedback circuits; Germanium silicon alloys; Parasitic capacitance; Protection; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494040
