DocumentCode
1672761
Title
A 114GHz VCO in 0.13 μm CMOS technology
Author
Huang, Ping-Chen ; Tsai, Ming-Da ; Wang, Huei ; Chen, Chun-Hung ; Chang, Chih-Sheng
Author_Institution
Nat. Taiwan Univ., Taipei, Taiwan
fYear
2005
Firstpage
404
Abstract
A differential transimpedance amplifier combined with a positive feedback compensation circuit tolerates 1.5pF parasitic capacitance from ESD protection in 0.35 μm SiGe BiCMOS. A 2.5Gb/s receiver demonstrates 15kΩ transimpedance gain and DR from -3 to -23.5dBm while consuming 21mW from a 3V supply.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; capacitance; compensation; differential amplifiers; electrostatic discharge; feedback amplifiers; millimetre wave receivers; voltage-controlled oscillators; 0.13 micron; 0.35 micron; 1.5 pF; 114 GHz; 2.5 Gbit/s; 21 mW; 3 V; CMOS technology; ESD protection; Ge-Si; SiGe BiCMOS; VCO; differential transimpedance amplifier; parasitic capacitance; positive feedback compensation circuit; receiver; transimpedance gain; BiCMOS integrated circuits; CMOS technology; Differential amplifiers; Electrostatic discharge; Feedback circuits; Germanium silicon alloys; Parasitic capacitance; Protection; Silicon germanium; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
0-7803-8904-2
Type
conf
DOI
10.1109/ISSCC.2005.1494040
Filename
1494040
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