DocumentCode :
1672769
Title :
Characterization and application of SOG in interlevel planarization
Author :
Zhi, Jun ; Zhuang, Tongzeng ; Zhang, Shuhong
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
1995
Firstpage :
284
Lastpage :
286
Abstract :
In this article, SOG material and interlevel dielectric planarizing methods using SOG are introduced. Compared with other methods, SOG has the advantages of simplifying process, good planarizing effect and not affecting other devices on substrate. SOG films have SiO 2-like characteristics and inherent quality of planarizing the underlying topography and offer an attractive approach to dielectric planarization. There are three often used methods with SOG-Total Etchback, Partial Etchback and Non-Etchback. We have used SOG as the planarization material in our laboratory. By using ACCUGLASS P-114LS SOG, we have made some experiments with these planarizing methods
Keywords :
coating techniques; dielectric thin films; etching; glass; integrated circuit interconnections; integrated circuit metallisation; surface treatment; ACCUGLASS P-114LS; SOG; dielectric planarizing methods; interlevel planarization; nonetchback; partial etchback; total etchback; Circuits; Dielectric materials; Dielectric substrates; Dry etching; Laboratories; Microelectronics; Organic materials; Planarization; Resists; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
Type :
conf
DOI :
10.1109/ICSICT.1995.500088
Filename :
500088
Link To Document :
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