23GHz front-end circuits in SiGe BiCMOS technology

Author

Li, Yinggang ; Bao, Mingquan ; Ferndahl, Mattias ; Cathelin, Andreia

Author_Institution

MHSERC, Ericsson AB, Molndal, Sweden

fYear

2003

Firstpage

99

Lastpage

102

Abstract

This paper reports a monolithic 23GHz low-noise converter (LNC) and its blocks implemented in commercial SiGe BiCMOS process featuring 70GHz f_T and 90GHz f_max. In general, measurement and simulation show close correspondence. For low-noise amplifier, 43dB noise figure (NF) and 22dB gain are typically obtained. For mixers, 13.5-15.5dB single sideband NF, 2-6dB gain and 2-8dBm IIP3 are measured, depending on whether or not linearizer is applied. The LNC converts an RF signal around 23GHz down to an IF of 1GHz. Its performance is described and related questions are discussed at the end of this paper.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; semiconductor materials; 13.5 to 15.5 dB; 2 to 6 dB; 22 dB; 23 GHz; 43 dB; IF signal; IIP3; RF signal; SiGe; SiGe BiCMOS technology; active mixer; front-end circuit; gain; low-noise amplifier; monolithic low-noise converter; noise figure; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Microwave technology; Noise figure; Noise measurement; Production; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213902

Filename

1213902