Title :
Effects of O2 plasma power on the structural and surface morphologies of ZnO thin films grown on the flexible PES substrate by atomic layer deposition
Author :
Heo, J.H. ; Lee, J.Y. ; Shin, C.M. ; Lee, T.M. ; Park, J.H. ; Ryu, H.
Author_Institution :
Dept. of Nano Syst. Eng., Inje Univ., Gimhae, South Korea
Abstract :
ZnO thin films were deposited on polyethersurfone (PES) substrates by atomic layer deposition (ALD). We investigated the effects of O2 plasma pretreatment from 0 W to 100 W before the ZnO growth. When the plasma power was increased, the PET substrate surface roughness was also increased. However, the surface roughness of ZnO on the roughest PET substrate with maximum plasma power pretreatment showed the smoothest value. The XRD (002) peak intensity of ZnO was increased with increasing plasma power. The morphologies of ZnO thin films were measured by atomic force microscope (AFM) and scanning electron microscope (SEM). And the crystal structural properties were analyzed by X-ray diffraction (XRD) method.
Keywords :
II-VI semiconductors; X-ray diffraction; atomic force microscopy; atomic layer deposition; crystal structure; oxygen; plasma materials processing; polymers; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; surface roughness; zinc compounds; (002) peak intensity; AFM; O2; SEM; X-ray diffraction; XRD; ZnO; atomic force microscope; atomic layer deposition; crystal structural property; flexible PES substrate; plasma power pretreatment; polyethersurfone substrates; power 0 W to 100 W; scanning electron microscope; structural morphology; surface morphology; surface roughness; thin film growth; Atomic force microscopy; Plasma measurements; Plasma properties; Plasma x-ray sources; Positron emission tomography; Rough surfaces; Scanning electron microscopy; Surface morphology; Surface roughness; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425113