Title :
Development of Radiation Hardened by Design(RHBD) primitive gates using 0.18μm CMOS technology
Author :
Trivedi, Rakesh ; Devashrayee, N.M. ; Mehta, Usha S. ; Desai, N.M. ; Patel, Himanshu
Author_Institution :
ISRO-RESPOND Programme, Nirma Univ., Ahmedabad, India
Abstract :
Radiation Hardened By Design (RHBD) combinational circuits/primitive gates using 0.18um CMOS Technology is developed for Space application with help of Cogenda TCAD software suite. The proposed combinational cells are investigated for radiation simulation using three dimensional (3D) device structure. Single Event Transient (SET) caused by proton, α particle and heavy ions like C, Ar and Kr is observed on developed Cells and SET pulse width is measured on primitive gates. The proposed C element based radiation hardened Inverter is simulated using α, Ar and proton energetic particle. Proposed NOR and NAND gates are simulated under the radiation of proton, α and Kr and Single Event Transient Pulse Width is measured.
Keywords :
combinational circuits; logic design; logic gates; radiation hardening (electronics); CMOS technology; combinational circuits; radiation hardened by design primitive gates; single event transient; size 0.18 mum; three dimensional device structure; Argon; Inverters; Logic gates; Mathematical model; Protons; Radiation hardening (electronics); Solid modeling; 0.18um CMOS Technology; Heavy Ion; Radiation Hardened by Design(RHBD); Single Event Transient (SET);
Conference_Titel :
VLSI Design and Test (VDAT), 2015 19th International Symposium on
Conference_Location :
Ahmedabad
Print_ISBN :
978-1-4799-1742-6
DOI :
10.1109/ISVDAT.2015.7208046
