DocumentCode
1672814
Title
A 0.6-22-GHz broadband CMOS distributed amplifier
Author
Liu, Ren-Chieh ; Deng, Kuo-Liang ; Wang, Huei
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2003
Firstpage
103
Lastpage
106
Abstract
A CMOS distributed amplifier (DA) covering 0.6 to 22 GHz is presented in this paper. Cascode gain cells and m-derived matching sections are used to enhance the gain and bandwidth performance. The DA chip achieves measured gain of 7.3 ± 0.8 dB with chip area of 0.9 × 1.5 mm2 including testing pads. The amplifier was fabricated in a standard 0.18-μm CMOS technology and demonstrated the highest frequency and bandwidth of operation among previously reported amplifiers using regular CMOS processes to date.
Keywords
CMOS analogue integrated circuits; distributed amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; wideband amplifiers; 0.18 micron; 0.6 to 22 GHz; 7.3 dB; broadband CMOS distributed amplifier; cascode gain cell; m-derived matching section; Area measurement; Bandwidth; CMOS process; CMOS technology; Distributed amplifiers; Gain measurement; Operational amplifiers; Performance gain; Semiconductor device measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1213903
Filename
1213903
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