• DocumentCode
    1672814
  • Title

    A 0.6-22-GHz broadband CMOS distributed amplifier

  • Author

    Liu, Ren-Chieh ; Deng, Kuo-Liang ; Wang, Huei

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2003
  • Firstpage
    103
  • Lastpage
    106
  • Abstract
    A CMOS distributed amplifier (DA) covering 0.6 to 22 GHz is presented in this paper. Cascode gain cells and m-derived matching sections are used to enhance the gain and bandwidth performance. The DA chip achieves measured gain of 7.3 ± 0.8 dB with chip area of 0.9 × 1.5 mm2 including testing pads. The amplifier was fabricated in a standard 0.18-μm CMOS technology and demonstrated the highest frequency and bandwidth of operation among previously reported amplifiers using regular CMOS processes to date.
  • Keywords
    CMOS analogue integrated circuits; distributed amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; wideband amplifiers; 0.18 micron; 0.6 to 22 GHz; 7.3 dB; broadband CMOS distributed amplifier; cascode gain cell; m-derived matching section; Area measurement; Bandwidth; CMOS process; CMOS technology; Distributed amplifiers; Gain measurement; Operational amplifiers; Performance gain; Semiconductor device measurement; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
  • ISSN
    1529-2517
  • Print_ISBN
    0-7803-7694-3
  • Type

    conf

  • DOI
    10.1109/RFIC.2003.1213903
  • Filename
    1213903