DocumentCode :
1672845
Title :
Low-temperature fabrication of bunch-shaped ZnO nanowires using an sodium hydroxide aqueous solution
Author :
Hu, Xiulan ; Masuda, Yoshitake ; Ohji, Tatsuki ; Kato, Kazumi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Nagoya, Japan
fYear :
2010
Firstpage :
943
Lastpage :
944
Abstract :
By the forced-hydrolysis-initiated-nucleation of anhydrous zinc acetate, bunch-shaped ZnO nanowires film was successfully fabricated in an aqueous solution of zinc acetate and sodium hydroxide at low temperature. X-ray diffraction and a field emission scanning electron microscope clarified their formation mechanism and morphology development. The morphology was controllable by adjusting the solution temperature and deposition time. A high aspect ratio of 105 (3.17 ¿m in length and 30 nm in diameter) was obtained at 65°C for 6 h. This fabrication technique indicated that ZnO film may be prepared at low cost, and fittable to low heat-resistance substrates such as a polymer substrate. The novel technique will broaden its potential applications in many fields.
Keywords :
II-VI semiconductors; X-ray diffraction; field emission electron microscopy; nanofabrication; nanowires; nucleation; polymers; scanning electron microscopy; semiconductor quantum wires; semiconductor thin films; sodium compounds; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO; anhydrous zinc acetate; aqueous solution; bunch-shaped nanowires; deposition time; field emission scanning electron microscope; film; forced-hydrolysis-initiated-nucleation; heat-resistance substrates; low-temperature fabrication; morphology development; polymer substrate; size 3.17 mum; size 30 nm; sodium hydroxide aqueous solution; temperature 65 degC; time 6 h; Electron emission; Fabrication; Morphology; Nanowires; Polymer films; Scanning electron microscopy; Substrates; Temperature; X-ray diffraction; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425116
Filename :
5425116
Link To Document :
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