Title :
A low-power UHF differential LNA in 0.35-μm SOI CMOS
Author :
Zencir, Ertan ; Huang, Te-Hsin ; Dogan, Numan S. ; Arvas, Ercument
Author_Institution :
Dept. of Electr. Eng., North Carolina A&T State Univ., Greensboro, NC, USA
Abstract :
A low-power 435-MHz differential low-noise amplifier was implemented in a 0.35-μm Silicon On Insulator (SOI) CMOS process. This LNA is intended for use in a UHF receiver under development for deep space communications. The differential LNA has a measured noise figure of 3.25 dB, input 1-dB compression point of -14.18 dBm, input third-order intercept point of -5 dBm, and small-signal gain of 18.74 dB. Total power dissipation is 16.5 mW from a 2.5-V supply. LNA occupies a die area of 1 mm × 1.4 mm. This is the first UHF differential LNA implemented in an SOI CMOS process.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; differential amplifiers; integrated circuit design; integrated circuit noise; low-power electronics; silicon-on-insulator; space communication links; 0.35 micron; 1 mm; 1.4 mm; 16.5 mW; 18.74 dB; 2.5 V; 3.25 dB; 435 MHz; SOI CMOS process; Si; UHF IC; UHF receiver; deep space communications; low-noise amplifier; low-power differential LNA; CMOS analog integrated circuits; CMOS process; Capacitance; FETs; Insulation; Linearity; Noise figure; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213905
