Title :
Simulation of ion implantation using the four-parameter kappa distribution function
Author :
Puchner, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
A two-dimensional model for the simulation of ion implantation into arbitrary geometries has been developed. The four-parameter kappa distribution function was introduced for the first time in semiconductor technology to describe the vertical dopant profile of implanted ions. Owing to the low computational effort and the short simulation time the given method is an alternative to modern Monte Carlo simulations for ion implantation processes
Keywords :
digital simulation; doping profiles; ion implantation; semiconductor process modelling; arbitrary geometries; four-parameter kappa distribution function; ion implantation; simulation time; two-dimensional model; vertical dopant profile; Analytical models; Computational modeling; Convolution; Distributed computing; Distribution functions; Geometry; Ion implantation; Semiconductor process modeling; Solid modeling; Statistical distributions;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500091
