Title :
Low energy oscillatory phenomena in photoreflectance of GaMnAs films grown by LT-MBE
Author :
Luo, X.D. ; Liu, P.S. ; Ding, B.D. ; Wang, Y.Q. ; Ge, W.K. ; Wang, J.N.
Abstract :
Low energy oscillations (LEOs), lower than the band gap of Ga(Mn)As, were observed well in the photo-modulation reflectance and reflectance spectra of GaMnAs grown by low temperature molecular-beam epitaxy. By simulating the oscillations of the reflectance spectra, These LEOs were contributed to the variable refractive indexes induced by the high hole density in GaMnAs.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; hole density; manganese compounds; molecular beam epitaxial growth; photoreflectance; refractive index; semiconductor thin films; ultraviolet spectra; visible spectra; GaMnAs; band gap; high hole density; low energy oscillatory; low temperature molecular-beam epitaxy growth; photomodulation reflectance; photoreflectance; reflectance spectra; refractive index; thin film growth; Biomedical optical imaging; Gallium arsenide; Lasers and Electro-Optics Society; Optical films; Photonic band gap; Physics; Reflectivity; Refractive index; Substrates; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425118
