2-dimensional analysis and experiment of planar high-voltage device terminal

Author

Xiaowu, Gong ; Yumin, Gao ; Jinsheng, Luo

Author_Institution

Inst. of Microelectron., Xi´´an Jiaotong Univ., China

fYear

1995

Firstpage

301

Lastpage

303

Abstract

Using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of planar high-voltage device. It can simulate reverse characteristics of high-voltage device relating to field limiting rings, field plates, SiO₂ dielectric and interface charge. The simulation example and experimental results of a planar junction structure with field plates and field rings are given in this paper

Keywords

MIS devices; characteristics measurement; digital simulation; finite element analysis; power semiconductor devices; semiconductor device models; MOS devices; SiO₂; computer simulation program; field limiting rings; field plates; interface charge; planar high-voltage device; planar junction structure; reverse characteristics; terminal field calculation; two-dimensional finite-element numerical analysis; Computational modeling; Computer simulation; Dielectric devices; Finite element methods; Gaussian distribution; Laplace equations; Microelectronics; Numerical analysis; Semiconductor devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500093

Filename

500093