Title :
Investigation of channeling in field oxide corners by three-dimensional Monte Carlo simulation of ion implantation
Author :
Bohmayr, W. ; Schrom, G. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
The effects of channeling of source/drain (S/D) implants in field oxide corners are investigated by three-dimensional Monte Carlo simulation of ion implantation. The simulations were carried out for conventional LOCOS and for poly-buffered LOCOS, assuming idealized field oxide geometries. The results of amorphous mode and crystalline mode simulations were compared. For poly-buffered LOCOS we found that due to channeling the bend radius of the isometric surfaces of the dopant concentration is significantly decreased in the field oxide corner even when using a 7° tilt angle for dechanneling. This may result in a reduced breakdown voltage of S/D-to-well diodes
Keywords :
MOSFET; Monte Carlo methods; digital simulation; doping profiles; ion implantation; semiconductor process modelling; S/D-to-well diodes; amorphous mode simulations; bend radius; crystalline mode simulations; dopant concentration; field oxide corners; idealized field oxide geometries; ion implantation; isometric surfaces; poly-buffered LOCOS; source/drain implants; three-dimensional Monte Carlo simulation; tilt angle; Amorphous materials; Crystallization; Diodes; Doping; Geometry; Ion implantation; Microelectronic implants; Silicon; Solid modeling; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500094
