Title :
Differential SiGe power amplifier for 3GPP WCDMA
Author :
Juurakko, Pasi ; Saari, Ville ; Ryynänen, Jussi ; Halonen, Kari
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
An integrated differential two-stage power amplifier (PA) operating at the 2 GHz frequency range is introduced. The implemented power amplifier uses 2.7 V supply voltage and was fabricated with 0.35μm SiGe BiCMOS technology. The measured output power at the -1 dB compression point is 21 dBm, but the amplifier is capable of providing 26.7 dBm output power at the -5 dB gain compression. The measured linear gain is 22 dB. The chip area is 2.36 mm2 including bonding pads. The linearity performance of the power amplifier was measured with 3GPP WCDMA basestation signal. The power amplifier fulfilled the 3GPP WCDMA Adjacent Channel Leakage Ratio (ACLR) specifications (ACLR1=45 dB and ACLR2=50 dB) with 11.65 dBm average channel output power.
Keywords :
3G mobile communication; BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; code division multiple access; differential amplifiers; semiconductor materials; 0.35 micron; 2 GHz; 2.7 V; 3GPP WCDMA; SiGe; SiGe BiCMOS technology; adjacent channel leakage ratio; integrated differential two-stage power amplifier; Differential amplifiers; Frequency; Gain measurement; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213910
