• DocumentCode
    1673105
  • Title

    Hydrogen adsorption on Li metal in boron substituted graphene: ab initio approach

  • Author

    Park, Hong-Lae ; Chung, Yong-Chae

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
  • fYear
    2010
  • Firstpage
    917
  • Lastpage
    918
  • Abstract
    The characteristics of hydrogen adsorption on Li metal atoms dispersed on graphene with boron substitution were investigated for Li clustering, hydrogen bonding characteristics and open metal states of Li adatom by using density functional theory calculations. It is found that Li atoms are well dispersed on boron substituted graphene and can form the (2 × 2) pattern because clustering of Li atoms is hindered by repulsive Coulomb interaction between Li atoms. One Li adatom dispersed on the double side of graphene can absorb up to 8 hydrogen molecules corresponding to 13.2% hydrogen storage capacity. In addition, adsorption behaviors of non-hydrogen atoms such as C, B, and O2 are calculated to find whether Li atom can be remained as open metal state in boron substituted graphene.
  • Keywords
    ab initio calculations; adsorption; atomic clusters; density functional theory; disperse systems; graphene; hydrogen; hydrogen bonds; hydrogen storage; lithium compounds; metal clusters; molecular configurations; oxygen; B; C; H; Li-C:B; O2; ab initio approach; boron substituted graphene; density functional theory calculations; dispersed system; hydrogen adsorption; hydrogen bonding; hydrogen molecules; hydrogen storage capacity; lithium adatom; lithium clustering; metal atoms; metal state; nonhydrogen atoms; repulsive Coulomb interaction; Bonding; Boron; Computational modeling; Density functional theory; Hydrogen storage; Linear discriminant analysis; Material storage; Materials science and technology; Organic materials; Sheet materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425125
  • Filename
    5425125