DocumentCode
1673132
Title
Robust and performing RF LDMOS device integrated in a VLSI BCD silicon technology
Author
Labate, L. ; Moscatelli, A. ; Stella, R.
Author_Institution
STMicroelectronics, Cornaredo, Italy
fYear
2003
Firstpage
159
Lastpage
162
Abstract
A high performance RF LDMOS device suitable for RF power amplifier handsets applications has been successfully integrated in a 0.35 μm pure silicon BCD technology. In this paper, device architecture, DC, small signal and load pull performances are shown, together with device model description and accuracy.
Keywords
MOS analogue integrated circuits; VLSI; mobile handsets; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; 0.35 micron; RF LDMOS device; RF power amplifier; VLSI BCD silicon technology; mobile handset; CMOS process; CMOS technology; High power amplifiers; Immune system; Lithography; Radio frequency; Radiofrequency amplifiers; Silicon; Substrates; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1213916
Filename
1213916
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