DocumentCode :
1673219
Title :
Molecular dynamics simulation of Argon-atom bombardment on graphene sheets
Author :
Wei, Xiao-Lin ; Zhang, Kai-Wang ; Wang, Ru-Zhi ; Liu, Wen-Liang ; Zhong, Jian-Xin
Author_Institution :
Lab. for Quantum Eng. & Micro-Nano Energy Technol., Xiangtan Univ., Xiangtan, China
fYear :
2010
Firstpage :
566
Lastpage :
567
Abstract :
By a molecular dynamics method and using different incident energy and particle density, we calculated the argon-atom bombardment on a graphene sheet. The results show that, the damage of the bombardment on the graphene sheet depends not only on the incident energy but also on the particle density of argon atoms. To compare and analyze the effect of the incident energy and the particle density in the argon-atom bombardment, we defined the impact factor on graphene sheet of the incident energy and the particle density by analyzing the structural Lindeman- index and calculating the broken-hole area of the sheet, respectively. The results indicate that, there is a critical incident energy and particle density for destroying the graphene sheet, and there is an exponential accumulated-damage for the impact of both the incident energy and the particle density in argon-atom bombardment on a graphene sheet. Our results supply some valuable mechanics parameters for fabrication of potential graphene-based electronic devices with high particle radiation.
Keywords :
argon; graphene; ion beam effects; molecular dynamics method; Ar; C; argon-atom bombardment; broken-hole area; graphene sheets; graphene-based electronic device application; incident energy; mechanics parameters; molecular dynamics simulation; particle density; particle radiation; structural Lindeman-index; Argon; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Computational modeling; Force measurement; Materials science and technology; Mechanical factors; Mechanical variables measurement; Nanoelectromechanical systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425129
Filename :
5425129
Link To Document :
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