DocumentCode
1673369
Title
Broadband high-efficiency HBT MMIC power amplifier fabricated with re-aligned process
Author
Komiak, J.J. ; Yang, L.W. ; Brozovich, R.S. ; Fu, S.T. ; Smith, D.P.
Author_Institution
General Electric Co., Syracuse, NY, USA
fYear
1993
Firstpage
1473
Abstract
The design and performance of a 6-10-GHz heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier that produces 1.25 to 2.15 W at 30 to 46% power-added efficiency with 9.5 to 12.5 dB of power gain are described. With only 500 mu m/sup 2/ of output periphery, record MMIC HPA (high-power amplifier) power densities of 2.5 to 4.3 mW/ mu m/sup 2/ have been demonstrated.<>
Keywords
MMIC; bipolar integrated circuits; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; wideband amplifiers; 1.25 to 2.15 W; 30 to 46 percent; 6 to 10 GHz; 9.5 to 12.5 dB; HBT MMIC power amplifier; output periphery; power densities; power gain; power-added efficiency; re-aligned process; Bipolar integrated circuits; Broadband amplifiers; Heterojunction bipolar transistors; High power amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Process design;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.276719
Filename
276719
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