DocumentCode
1673424
Title
High P1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8 GHz ETC terminals
Author
Shinjo, Shintaro ; Ueda, Hiro-omi ; Sugano, Takayuki ; Nakanishi, Masahiko ; Inoue, Masahiro ; Suematsu, Noriharu
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan
fYear
2003
Firstpage
195
Lastpage
198
Abstract
A 5.8 GHz high P1dB and low quiescent current SiGe HBT three-stage power amplifier (PA) MMIC using a self base bias control circuit is described. The self base bias control circuits are applied to the second and the final stage PA´s, and automatically control the base current/voltage according to the output power level. As a result, high P1dB is obtained at a low quiescent current condition. The simulated results show that the proposed three-stage PA MMIC achieves P1dB improvement of 1.7 dB compared with a conventional PA using a constant base voltage bias circuit at the same quiescent current condition. The fabricated PA MMIC achieves P1dB of 15.3 dBm, gain of 19.6 dB with the quiescent current of 22.2 mA at 5.8 GHz.
Keywords
MMIC power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; heterojunction bipolar transistors; transceivers; 19.6 dB; 22.2 mA; 5.8 GHz; ETC terminals; HBT power amplifier MMIC; SiGe; output power level; quiescent current; self base bias control circuit; three-stage PA MMIC; Automatic control; Automatic voltage control; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Power generation; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1213924
Filename
1213924
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