A Versatile 600V BCD Process for High Voltage Applications

Author

Qiao, Ming ; Zhou, Xianda ; Zheng, Xin ; Fang, Jian ; Zhang, Bo ; Li, Zhaoji

Author_Institution

Univ. of Electron. Sci. & Technol., Chengdu

fYear

2007

Firstpage

1248

Lastpage

1251

Abstract

A versatile 600 V BCD process using thin epitaxial technology has been realized for high voltage applications. High voltage double RESURF LDMOS with the breakdown voltage up to 900 V as well as low voltage CMOS and BJT have been achieved using this high voltage BCD process. An experimental half bridge gate drive IC is also successfully implemented, the high side floating offset voltage in the half bridge drive IC is above 850 V with a conventional level shifting structure, and the detrimental effect of the high voltage interconnection metal line can be almost ignored using this high voltage BCD process without using additional mask or process. The major features of this process for high voltage applications have been clearly demonstrated.

Keywords

BIMOS integrated circuits; CMOS integrated circuits; bipolar transistors; bridge circuits; driver circuits; integrated circuit interconnections; power integrated circuits; BJT; RESURF LDMOS; bipolar CMOS DMOS; epitaxial technology; floating offset voltage; half bridge drive IC; half bridge gate drive IC; high voltage applications; high voltage interconnection metal line; versatile BCD process; voltage 600 V; Breakdown voltage; Bridge circuits; CMOS logic circuits; CMOS process; CMOS technology; Doping; Epitaxial layers; Isolation technology; Low voltage; MOS devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on

Conference_Location

Kokura

Print_ISBN

978-1-4244-1473-4

Type

conf

DOI

10.1109/ICCCAS.2007.4348273

Filename

4348273