Title :
The Total Dose Radiation Hardened MOSFET with Good High-temperatue Performance
Author :
Cheng, Jianbing ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
Total dose radiation hardened partial silicon-on-insulator (PSOI) MOSFET structure is proposed in this paper. Radiation effects of SOI and PSOI MOSFET are discussed and compared. Simulation results show that the subthreshold performance of SOI MOSFET is significantly deteriorated even under low radiation dose. But the total dose radiation tolerance of PSOI MOSFET is superior to its conventional SOI counterpart under the same radiation dose. Additionally, the influence of transistor´s physical parameters on total dose radiation is analyzed. The tolerance is enhanced with the increase of the PSOI silicon window length when the devices are under high total dose conditions. Furthermore, PSOI MOSFET performs better than that of SOI MOSFET at high temperature under harsh radiation condition.
Keywords :
MOSFET; radiation effects; silicon-on-insulator; SOI MOSFET; partial silicon-on-insulator; radiation effects; total dose radiation tolerance; Electron traps; Isolation technology; Lead compounds; MOSFET circuits; Microelectronics; Radiation effects; Radiation hardening; Silicon on insulator technology; Solid state circuits; Temperature;
Conference_Titel :
Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
Conference_Location :
Kokura
Print_ISBN :
978-1-4244-1473-4
DOI :
10.1109/ICCCAS.2007.4348274
