Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristics

Author

Liu, Kou-Chen ; Tzeng, Wen-Hsien ; Chang, Kow-Ming ; Chan, Yi-Chun ; Kuo, Chun-Chih ; Cheng, Chun-Wen

Author_Institution

Inst. of Electro-Opt. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2010

Firstpage

898

Lastpage

899

Abstract

A transparent resistive random access memory (T-RRAM) based on ITO/Gd₂O₃/ITO capacitor structure is successfully fabricated on glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd₂O₃/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.

Keywords

capacitors; gadolinium compounds; glass; indium compounds; pulsed laser deposition; random-access storage; thin films; InSnO-Gd₂O₃-InSnO; SiO₂; bipolar operation; capacitor structure; film; glass substrate; nonpolar resistive switching; nonvolatile memory; pulse laser deposition; temperature 293 K to 298 K; transparent resistive random access memory; voltage -2 V; voltage 2 V; Capacitors; Conductive films; Electrodes; Glass; Indium tin oxide; Optical pulses; Pulsed laser deposition; Random access memory; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425137

Filename

5425137