Title :
Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristics
Author :
Liu, Kou-Chen ; Tzeng, Wen-Hsien ; Chang, Kow-Ming ; Chan, Yi-Chun ; Kuo, Chun-Chih ; Cheng, Chun-Wen
Author_Institution :
Inst. of Electro-Opt. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
A transparent resistive random access memory (T-RRAM) based on ITO/Gd2O3/ITO capacitor structure is successfully fabricated on glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.
Keywords :
capacitors; gadolinium compounds; glass; indium compounds; pulsed laser deposition; random-access storage; thin films; InSnO-Gd2O3-InSnO; SiO2; bipolar operation; capacitor structure; film; glass substrate; nonpolar resistive switching; nonvolatile memory; pulse laser deposition; temperature 293 K to 298 K; transparent resistive random access memory; voltage -2 V; voltage 2 V; Capacitors; Conductive films; Electrodes; Glass; Indium tin oxide; Optical pulses; Pulsed laser deposition; Random access memory; Substrates; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425137
