• DocumentCode
    1673475
  • Title

    A novel adiabatic SRAM cell implementation using split level charge recovery logic

  • Author

    Kumar, S. Dinesh ; Noor Mahammad, S.K.

  • Author_Institution
    Dept. of EDM, IIITD&M Kancheepuram, Chennai, India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    With the advancement in technologies, data storage has become crucial for low power applications. Static random access memory (SRAM) is popular for its fast access of data but it is prone to high power dissipation. Adiabatic logic is one of the techniques which have proven to reduce the energy consumed by the circuit per operation. A novel adiabatic SRAM cell has been proposed in this paper. The proposed cell resembles the operation of the conventional 6T SRAM cell. The latch of the SRAM cell has been modelled using split level charge recovery logic (SCRL). The proposed circuit is simulated using Cadence Virtuoso (180nm) and it is compared with the conventional 6T SRAM cell. The proposed SRAM cell consumes 8.7 times less power as compared to the conventional 6T SRAM cell at 100MHz.
  • Keywords
    SRAM chips; logic circuits; low-power electronics; recovery; Cadence Virtuoso; SCRL; adiabatic SRAM cell; adiabatic logic; data storage; frequency 100 MHz; power dissipation; size 180 nm; split level charge recovery logic; static random access memory; Capacitance; Clocks; Latches; Logic gates; SRAM cells; Transistors; SCRL and Adiabatic Logic; SRAM Cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design and Test (VDAT), 2015 19th International Symposium on
  • Conference_Location
    Ahmedabad
  • Print_ISBN
    978-1-4799-1742-6
  • Type

    conf

  • DOI
    10.1109/ISVDAT.2015.7208071
  • Filename
    7208071