Title :
Characterization of multiferroic thin films directly deposited on silicon for novel device applications
Author :
Prashanthi, K. ; Palkar, V.R.
Author_Institution :
Centre for Excellence in Nanoelectron., IIT Bombay, Mumbai, India
Abstract :
We have investigated the multiferroic and dielectric properties in Dy modified BiFeO3 thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.
Keywords :
bismuth compounds; dielectric thin films; iron compounds; multiferroics; pulsed laser deposition; silicon; BiFeO3; Si; device applications; dielectric properties; future CMOS applications; gate dielectrics; multiferroic based MEMS devices; multiferroic properties; multiferroic thin films; pulsed laser deposition; silicon; Dielectric devices; Dielectric thin films; Microelectromechanical devices; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; Thin film devices; Usability;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425138
