• DocumentCode
    1673481
  • Title

    Optimization of silicon-on-insulator rib waveguide geometry for maximum continuous wave Raman gain

  • Author

    Wenting Hong ; Wang, S.H.

  • Author_Institution
    Dept. of Microelectron., Fuzhou Univ., Fuzhou, China
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We numerically investigated the relationship between the transverse waveguide geometry and the continuous wave Raman gain in SOI rib waveguide Raman amplifiers. By optimizing the transverse geometric size, a Raman gain enhancement can be achieved in silicon rib waveguides with small effective carrier lifetime.
  • Keywords
    carrier lifetime; elemental semiconductors; optical waveguides; rib waveguides; silicon; silicon-on-insulator; Raman gain enhancement; effective carrier lifetime; maximum continuous wave Raman gain; optimization; rib waveguide geometry; silicon-on-insulator; transverse geometric size; Raman Amplification; Silicon photonics; Two photon absorption;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communications and Networks (ICOCN), 2012 11th International Conference on
  • Conference_Location
    Chonburi
  • Print_ISBN
    978-1-4673-4957-4
  • Electronic_ISBN
    978-1-4673-4958-1
  • Type

    conf

  • DOI
    10.1109/ICOCN.2012.6486223
  • Filename
    6486223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1673481