Title :
Novel SJ-LDMOS on SOI with Step Doping Surface-Implanted Layer
Author :
Chen, Wanjun ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Sichuan
Abstract :
A super-junction (SJ) SOI-LDMOS with step doping surface-implanted n-type layer is proposed and optimized which allows high breakdown voltage (BV) and low on-resistance (Ron). The proposed structure overcomes the field effect action in conventional SJ SOI-LDMOS devices thus achieving the charge compensation between the n and p pillars as well as a near uniform electric field distribution in the drift region in the off-state. The surface-implanted layer also provides a low current path in the on-state. The simulation results show that an increase in the off-state BV by 55% and a reduction of the specific on-resistance by 37.4% are obtained for the proposed device when compared with those of the conventional one.
Keywords :
charge compensation; electric breakdown; electric fields; field effect devices; silicon-on-insulator; breakdown voltage; charge compensation; field effect action; step doping surface-implanted layer; superjunction SOI-LDMOS; uniform electric field distribution; Automotive engineering; Doping profiles; Laboratories; Low voltage; MOS capacitors; MOSFETs; Silicon on insulator technology; Surface resistance; Thin film devices;
Conference_Titel :
Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
Conference_Location :
Kokura
Print_ISBN :
978-1-4244-1473-4
DOI :
10.1109/ICCCAS.2007.4348275
