Two-dimensional transmission line matrix (TLM) simulation of the electromagnetic fields in a rectangular section of a discretized GaAs MESFET channel with arbitrary doping profile

Author

Dindo, S. ; Ney, M.

Author_Institution

Dept. of Electr. Eng., Ottawa Univ., Ont., Canada

fYear

1993

Firstpage

1455

Abstract

A two-dimensional lossy shunt TLM network is adapted to simulate the Maxwell field equations of a GaAs MESFET. By discretizing the channel into rectangular sections of single thickness, the proposed TLM technique is shown to be able to simulate the calculated electromagnetic fields of an arbitrarily doped channel section. Theoretical and experimental results are compared for uniform and nonuniform channel conductivity.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; doping profiles; electromagnetic fields; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; MESFET; Maxwell field equations; arbitrary doping profile; electromagnetic fields; nonuniform channel conductivity; rectangular section; two-dimensional lossy shunt TLM network; uniform channel conductivity; Conductivity; Doping; Electromagnetic fields; Gallium arsenide; Intelligent networks; MESFETs; Magnetic fields; Maxwell equations; Poisson equations; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276723

Filename

276723