Title :
Total Dose Radiation Characteristics of High Voltage LDMOS on SIMOX Substrate
Author :
Xiao, Zhiqiang ; Qiao, Ming ; Zhang, Bo ; Xu, Jing
Author_Institution :
Univ. of Electron. Sci. & Technol., Chengdu
Abstract :
This paper presents the total dose radiation characteristics of high voltage LDMOS on SIMOX substrate using a total dose radiation-hard 0.8 mu m SOI CMOS process. The radiation performance is characterized by transistor threshold voltage shifts, transistor leakage currents. The experimental results show that the breakdown voltage of the LDMOS is 38 V, the threshold voltage shifts of front channels are less than 300 mV and the back channel threshold voltage are greater than 19 V at 1 Mrad(Si).
Keywords :
CMOS integrated circuits; radiation hardening (electronics); silicon-on-insulator; substrates; transistors; LDMOS; SIMOX substrate; SOI CMOS process; size 0.8 mum; total dose radiation characteristics; transistor leakage current; transistor threshold voltage shift; voltage 38 V; CMOS process; CMOS technology; Isolation technology; Laboratories; Leakage current; MOSFETs; Silicon on insulator technology; Testing; Thin film devices; Threshold voltage;
Conference_Titel :
Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
Conference_Location :
Kokura
Print_ISBN :
978-1-4244-1473-4
DOI :
10.1109/ICCCAS.2007.4348277
