Title :
A fully integrated class-E CMOS amplifier with a class-F driver stage
Author :
Ho, Chien-Chih ; Kuo, Chin-Wei ; Hsiao, Chao-Chih ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
This paper presents a fully integrated two-stage 1.9 GHz class-E amplifier, implemented by 0.18 μm CMOS technologies. By using the switching operation mode of a class-E amplifier, the DC power dissipation can be reduced, and this amplifier delivers a 16.3 dBm output power at 1.9 GHz, with a maximum power-added efficiency (PAE) of 70% from a 2-V DC supply voltage. This monolithic amplifier includes the matching and biasing circuit, where no external components are required.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; impedance matching; low-power electronics; switching circuits; 0.18 micron; 1.9 GHz; 2 V; 70 percent; biasing circuit; class-E CMOS amplifier; class-F driver stage; fully integrated CMOS amplifier; matching circuit; monolithic amplifier; switching operation mode; two-stage amplifier; CMOS technology; Driver circuits; Frequency; Operational amplifiers; Power amplifiers; Power generation; Power harmonic filters; Radiofrequency amplifiers; Transceivers; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213928
