Title :
Effect of annealing on the gate effective work-function modulation for the Al/TiN/SiO2/P-Si structure
Author :
Wang, Xiaorong ; Li, Bingzong ; Ru, Guoping ; Qu, Xinping ; Jiang, Yulong
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
In our work, we investigate the effective work function (EWF) modulation of the metal gate about the Al/TiN/SiO2/p-Si structure through the thermal annealing. Through different annealing temperature and different annealing time, we find the EWF of gate electrode shifts from 4.73 eV (suitable for PMOS) to 4.18 eV (suitable for NMOS). We think the diffusion of Al to the interface and the variation of the thin TiN film characteristic are responsible for the decrease of the EWF.
Keywords :
MIS structures; aluminium; annealing; diffusion; electrodes; elemental semiconductors; silicon; silicon compounds; thin films; titanium compounds; work function; Al-TiN-SiO2-Si; NMOS; PMOS; annealing; diffusion; electron volt energy 4.73 eV to 4.18 eV; gate effective work-function modulation; gate electrode; metal gate; thin film; Capacitors; Dielectric materials; Electrodes; High K dielectric materials; MOS devices; Plasma temperature; Rapid thermal annealing; Resists; Sputtering; Tin;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425139
