Title :
The high voltage/high power FET (HiVP)
Author :
Ezzeddine, Amin K. ; Huang, Ha C.
Author_Institution :
AMCOM Commun. Inc, Clarksburg, MD, USA
Abstract :
A new device configuration is presented: the High-Voltage/High-Power device (HiVP). This original configuration can dramatically improve the power and decrease the complexity of designing power amplifiers, leading to low cost and higher power. The HiVP uses a new concept, never achieved before, to simultaneously bias a semiconductor device at high voltage while maintaining an optimum output matching impedance close to 50 Ohms. The concept could be applied to many device technologies such as the GaAs MESFET, HEMT, and the Si MOSFET, to combine the power of several devices to achieve higher power output over broader bandwidth.
Keywords :
UHF field effect transistors; field effect MMIC; gallium arsenide; microwave field effect transistors; microwave power transistors; power HEMT; power MESFET; power MOSFET; silicon; GaAs; GaAs HEMT; GaAs MESFET; Si; Si MOSFET; device configuration; high voltage/high power FET; optimum output matching impedance; power MMIC process; power amplifiers; semiconductor device biasing; Costs; FETs; Gallium arsenide; HEMTs; High power amplifiers; Impedance matching; MESFETs; MOSFET circuits; Semiconductor devices; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213929
