Title :
Passive turn-on process of IGBTs in Matrix converter applications
Author :
Baburske, Roman ; Domes, Daniel ; Lutz, Josef ; Hofmann, Wilfried
Author_Institution :
Chemnitz Univ. of Technol., Chemnitz, Germany
Abstract :
The passive turn-on of IGBTs occurs in Matrix converter applications. This paper analyzes different IGBT-types in terms of passive turn-on. Measurements of passive turn-ons of different IGBT-types are shown and compared with diode turn-ons. The dependency of the turn-on voltage peak on the temperature, the gate resistance and the current is investigated. The results are analyzed by numerical device simulations.
Keywords :
insulated gate bipolar transistors; matrix convertors; IGBT; gate resistance; matrix converter applications; numerical device simulations; passive turn-on; turn-on voltage peak; Chemical technology; Circuits; Design engineering; Insulated gate bipolar transistors; Matrix converters; Plasma measurements; Power engineering and energy; Power semiconductor switches; Semiconductor diodes; Voltage; charge carrier plasma; forward-recovery; matrix converter and IGBT;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
