Title :
Low-power embedded SRAM modules with expanded margins for writing
Author :
Yamaoka, Masanao ; Maeda, Noriaki ; Shinozaki, Yoshihiro ; Shimazaki, Yasuhisa ; Nii, Koji ; Shimada, Shigeru ; Yanagisawa, Kazumasa ; Kawahara, Takayuki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A low-power embedded SRAM module implements a writing margin expansion for low-voltage operation, a write replica circuit for low-power operation and a low-leakage structure. The replica circuit reduces active power by 18%, and a 512kB module operates at 450MHz, has 7.8 μA leakage in standby, and a minimum VDD of 0.8V.
Keywords :
SRAM chips; low-power electronics; 0.8 V; 450 MHz; 512 kB; 7.8 muA; embedded SRAM module; low-leakage structure; low-power SRAM module; low-voltage operation; write replica circuit; writing margin expansion; Batteries; Circuits; Leakage current; MOS devices; Manufacturing processes; Random access memory; Timing; Ultra large scale integration; Voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494078
