Title :
Trench isolation technique for reverse blocking IGBT using Boron nitride doping wafers
Author :
Vellvehi, M. ; Gálvez, J.L. ; Perpiñà, X. ; Jordà, X. ; Godignon, P. ; Millán, J.
Author_Institution :
Centre Nac. De Microeletronica, Inst. De Microelectron. De Barcelona, Barcelona, Spain
Abstract :
A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation technique which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been demonstrated with the electrical measurements of the fabricated devices.
Keywords :
boron compounds; doping; insulated gate bipolar transistors; isolation technology; BN; doping wafers; electrical measurements; fabrication technique; reverse blocking IGBT; solid source; trench isolation technique; Boron; Doping; Etching; Fabrication; Insulated gate bipolar transistors; Matrix converters; Power semiconductor switches; Protection; Solids; Switching circuits; AC/AC converter; IGBT; Matrix Converter; Reverse Blocking;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
