Analytical Model for the Surface Electrical field Distributions of Double RESURF Devices with Gaussian-doped P-top Region

In this paper, an analytical model for the surface electrical field distributions of double RESURF devices with Gaussian-doped P-top region is presented. Based on the 2-D Poisson´s solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias; the dependence of breakdown voltage on drift region length and thickness is calculated. An effectual way to gain the optimum high-voltage devices is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the model presented here.