Title :
Semipolar (2021) blue and green InGaN light-emitting diodes
Author :
Zhao, Yuji ; Huang, Chia-Yen ; Tanaka, Shinichi ; Pan, Chih-Chien ; Fujito, Kenji ; Feezell, Daniel ; Speck, James S. ; DenBaars, Steven P. ; Nakamura, Shuji
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
Semipolar (202̅1̅) light-emitting diodes are demonstrated with high optical polarization ratio, high indium incorporation rate, small wavelength shift and narrow spectrum width. These advantages resulted in LEDs with high efficiency and low droop.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light polarisation; spectral line breadth; wide band gap semiconductors; InGaN; indium incorporation rate; narrow spectrum width; optical polarization ratio; semipolar (202̅1̅) blue InGaN light-emitting diode; semipolar (202̅1̅) green InGaN light-emitting diode; wavelength shift; Diode lasers; Electric fields; Gallium nitride; Indium; Light emitting diodes; Optical polarization; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
