DocumentCode
1673713
Title
Cubic GaInN/GaN multi-quantum wells for increased smart lighting system efficiency
Author
Stark, Christoph J M ; Detchprohm, Theeradetch ; Wetzel, Christian ; Lee, S.C. ; Brueck, S.R.J.
Author_Institution
Dept. of Phys., Appl. Phys., & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
Cubic GaInN/GaN multi-quantum wells (MQWs) are grown on V-grooved Si {100} substrates. The crystal phase is confirmed by electron-back scatter diffraction and cathodoluminescence shows room temperature MQW peak emission at 498 nm.
Keywords
III-V semiconductors; electrochemical electrodes; electroluminescence; electron backscattering; electron diffraction; gallium compounds; indium compounds; lighting; quantum well devices; wide band gap semiconductors; GaInN-GaN; Si; V-grooved grown; cathodoluminescence; crystal phase; cubic MQW; cubic multiquantum well; electron-back scatter diffraction; smart lighting system efficiency; temperature 293 K to 298 K; wavelength 498 nm; Gallium nitride; Light emitting diodes; Lighting; Quantum well devices; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326418
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