Title :
Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4 ISFET
Author :
Chaudhary, R. ; Sharma, A. ; Sinha, S. ; Yadav, J. ; Sharma, R. ; Mukhiya, R. ; Khanna, V.K.
Author_Institution :
Central Electron. Eng. Res. Inst. (CEERI), Pilani, India
Abstract :
This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same wafer as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer characteristics of on-chip fabricated MOSFET are obtained and measured in order to study the fabricated ISFET behavior to be used as pH sensor. Silicon nitride is preferred over silicon dioxide sensing film/dielectric (in case of MOSFET) which has better sensitivity and low drift. Process simulations were performed using Silvaco® TCAD tool.
Keywords :
MOSFET; aluminium; chemical vapour deposition; ion sensitive field effect transistors; semiconductor device models; silicon compounds; Al; ISFET characterization; LPCVD system; Si3N4; Silvaco TCAD tool; gate area; metal-oxide field-effect transistor; n-type MOSFET; on-chip fabricated MOSFET; pH sensor; process simulations; sensing membrane layer; silicon nitride; Fabrication; Logic gates; MOSFET; Performance evaluation; Semiconductor process modeling; Sensors; Silicon nitride; ISFET; MOSFET; Si3N4; Silvaco®;
Conference_Titel :
VLSI Design and Test (VDAT), 2015 19th International Symposium on
Conference_Location :
Ahmedabad
Print_ISBN :
978-1-4799-1742-6
DOI :
10.1109/ISVDAT.2015.7208083
